发明名称 MOS FET SWITCH CONTROL CIRCUIT
摘要 The circuit relates to a switching mode power supply (SMPS) employing MOS FET as a switching device for a high frequency switching. In the SMPS including a rectifier smoothing device (5), a voltage detection circuit (9) and a photo coupler, the control circuit comprises a starting means (11) for obtaining the starting voltage, a switching device (Q1), a current detection means (13), a protective means (12,15), a voltage detection circuit (9), a photo coupler (10), a load follower stabilizing device (14), a drive means (17) for switching of the switching device (Q1), a power suppling means (16), and a voltage stabilizing means (18).
申请公布号 KR930008657(B1) 申请公布日期 1993.09.11
申请号 KR19910008559 申请日期 1991.05.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RYU, HAN - CHONG
分类号 H03K17/785;(IPC1-7):H03K17/785 主分类号 H03K17/785
代理机构 代理人
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