| 摘要 |
PURPOSE:To avoid damages to a graphite sheet substrate and to heat the substrate with a high heating efficiency by heating the substrate by high-frequency direct heating. CONSTITUTION:A graphite sheet substrate 1 fed into a thin film forming chamber 2 is heated by an induction heating source 3. Since induction heating does not allow the direct contact of terminals as by electrothermal heating with a substrate, deformation and peeling of the surface of the graphite substrate can be prevented. Heating failure caused by a poor contact of electrothermal terminal with the substrate and temperature irregularity caused by a partial flow of current do not occur, and heating of uniform temperature distribution can be made; therefore, the film thickness of a semiconductor thin film formed on the substrate can be made uniform. Since induction heating causes no decrease in heating efficiency by gloss of the substrate surface, but heating of only the conductive substrate, efficient heating can be attained. The graphite sheet can be thinned very much, so that heating can be attained by a small power source capacitance. |
