| 摘要 |
PURPOSE:To prevent the capacity deterioration of the capacitor dielectric film of a semiconductor device which has the capacitor as a constituting element and miniaturizing the device by using an electricity conducting oxide film as the electric material of the capacitor. CONSTITUTION:When the device is applied to a dynamic random access memory device, a source 2, a drain 14, a pit line 3 for impressing a voltage on a transistor, a silicon oxide film 4 for element separation, a gate oxide film 5 which is to be a transfer gate and a word line 6 for applying bias on the film 5 are provided on a silicon substrate 1. A capacitor bottom electrode 7, a metal silicide film 8, an electricity conducting oxide film 9, a capacitor top electrode 11, a capacitor dielectric film 12 and an interlayer insulating film 13 are provided. Thus, the electricity conducting oxide film 9 is provided between the bottom electrode 7 and the dielectric film 12 so as to prevent the generation of low-dielectric constant oxide on the interface between the films 9 and 12 and the capacity deterioration of the capacitor is prevented. |
