| 摘要 |
PURPOSE:To form films of IV-VI group compound ferroelectric substance on a silicon board by interposing a specific buffer film between a silicon board and a ferroelectric substance gate film. CONSTITUTION:The title FET is provided with a silicon board 10 of facial azimuth (100), impurities diffusion layers 11 and 12, a buffer film 13 piling up in a manner to bridge between the layers 11 and 12, a ferroelectric substance gate film piled up on the film 13, and a gate electrode 16 prepared on the upper side of the film 14. The film 14 is composed of IV-VI group compound ferroelectric substance having a polarization in a facial azimuth (III), and the layer 13 is composed of IIa group fluoride substance whose lattice constant mismatches significantly that of silicon and slightly that of ferroelectric substance, and has an orientation of facial azimuth (III). Thus, the buffer film exhibits an orientation of facial azimuth (III), so the ferroelectric substance gate film has an oriented film of the same azimuth (III) as the polarization direction of ferroelectric substance. |
