MANUFACTURING METHOD AND STRUCTURE FOR CAPACITOR

摘要

The method for increasing the capacitance without increasing the horizontal surface comprises steps: (a) defining the active and isolation regions forming a field oxide layer; (b) forming a gate electrode, and its side wall oxide layer; (c) forming a source and a drain by injecting the impurity ion and thermal treating them; (d) forming a 1st oxide, a 1st polycrystal silicon, a 2nd oxide layers in sequence; (e) forming a buried contact by etching above ones selectively; (f) depositing a 2nd polycrystal silicon layer and etching it anisotropically to form a polycrystal silicon side wall on the side wall of the buried contact; and (g) forming a plate electrode on a dielectric layer formed on the exposed 1st polycrystal silicon layer and the side wall of the polycrystal silicon.