METHOD FOR FABRICATING MOS TRANSISTOR WITH THE VERTICAL GATE

摘要

The method for improving the step coverage of the metal thin film comprises steps: (a) forming a conductive line by injecting ion; (b) forming a source and drain regions by forming an oxide layer and injecting ion; (c) depositing LTO and patterning it to define common source and drain regions; (d) forming a 1st epitaxial and a gate oxide layers on the regions; (d) forming a side wall gate electrode after depositing and etching back a polysilicon; (e) forming a silicide layer on the side wall of the gate electrode; (f) forming a 2nd epitaxial layer and defining common source and drain regions on it; (g) depositing and patterning the LTO; and (h) forming polysilicon, dielectric and polysilicon layers in sequence and patterning them.