发明名称 |
Process for producing thin film by epitaxial growth. |
摘要 |
In the manufacture of a thin film by epitaxial growth, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4 SIMILAR 9) x 10<-><4> %/ mu m. <IMAGE> |
申请公布号 |
EP0559412(A1) |
申请公布日期 |
1993.09.08 |
申请号 |
EP19930301528 |
申请日期 |
1993.03.01 |
申请人 |
TDK CORPORATION |
发明人 |
YAMASAWA, KAZUHITO;OIDO, ATSUSHI;NAKATA, AKIO;UCHIDA, NOBUYA |
分类号 |
C30B19/00;C30B19/02 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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