SELECTIVE GROWTH METHOD OF LAYER CONTAINING ALUMINUM

摘要

PURPOSE: To enable performing selective growth of an aluminum-containing layer by heating a sample containing the exposed surface layer of a gallium- arsenic group semiconductor in a pressure reduced container and exposing the sample to gaseous aluminum precursor and phenyl arsine. CONSTITUTION: A sample 10 containing a substrate 9, having a surface layer 13 of a gallium-arsenic group III-V semiconductor is placed in a growing chamber, such as Inteback/gas source/Gen II. Evacuation is performed to a pressure lower than 10<-4> Torr. The sample recommendably is heated to 500-550 deg.C. Then, the semiconductor surface is exposed to gaseous molecules of phenyl arsine and exposed to a gaseous precursor containing aluminum such as trimethylamine allene. Thus, selective epitaxial growth of aluminum/gallium arsenic is obtained on the semiconductor surface.