发明名称 |
METHOD AND APPARATUS FOR GROWING SHAPED CRYSTALS |
摘要 |
A high temperature heat exchanger (20) is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots (12) as they are grown. The high temperature heat exchanger (20) also acts as a shaping die (20) so that silicon bars, or ingots (12) of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage. |
申请公布号 |
WO9317158(A1) |
申请公布日期 |
1993.09.02 |
申请号 |
WO1993US01657 |
申请日期 |
1993.02.24 |
申请人 |
CRYSTAL SYSTEMS, INC. |
发明人 |
SCHMID, FREDERICK;KHATTAK, CHANDRA, P.;GORBULEV, VLADIMIR |
分类号 |
C30B15/00;C30B15/06;C30B15/14 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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