GAS PHASE DOPING OF SEMICONDUCTOR MATERIAL IN A COLD-WALL RADIANTLY HEATED REACTOR UNDER REDUCED PRESSURE

摘要

A technique for doping silicon (100) material or other semiconductors (100, 200) uses gas phase dopant sources under reduced pressure in a radiantly heated (11), cold-wall reactor (10). The technique is applied to the automated integrated circuit manufacturingtechniques being adopted in modern fabrication facilities. The method includes placing a substrate (20) comprising semiconductor material on a thermally isolated support structure (18, 19) in a reduced pressure, cold-wall (25) reaction chamber (10); radiantly heating (11) the substrate (20) within the reaction chamber (10) to a controlled temperature; flowing a gas phase source of dopant at controlled pressure and concentration in contact with the substrate (20) so that the dopant is absorbed by the substrate (20) and annealing the substrate (20). The substrate (20) may be first coated with a layer of polycrystalline (105) semiconductor, and then gas phase doping as described above may be applied to the polycrystalline layer (105).