| 摘要 |
PURPOSE:To obtain a semiconductor device having a three-dimensional structure characterized by excellent heat radiating characteristic, by fixing and connecting semiconductor substrates, on which semiconductor elements are formed through conducting linking balls. CONSTITUTION:A smiconductor substrate 6 for lamination, on which semiconductor elements, interconnections for the elements, Al interconnections and the like are formed, is etched. Thus tapered linking holes 7 are formed. Au balls 16 are fixed in the holes 7. An insulating organic resin body 18 is embedded in each hole so that a part of each ball 16 on the hole side is exposed. The substrate 6 is overlapped so that an Au ball 23, which is fixed on each pad 22 on a good chip 21, agrees with the ball 16. The ball 23 and the ball 16 are fixed to each other. Similarly another substrate is laminated on the substrate 6. Then, thermal stress is absorbed by the balls 23, 16 and 24. Therefore, yield of cracks can be prevented. Since a required gap is formed between the substrates, the heat radiating characteristic is improved. |
