| 摘要 |
PURPOSE:To form the resist pattern superior in resolution by using the chemically amplified resist. CONSTITUTION:All the resist constituents, such as a base resin, a cross-linking agent, an acid-generating agent, a dissolution inhibitor, and the like except solvents are formed with materials not causing phase transition up to 110 deg.C, the substrate to be processed is coated with the chemically amplified-type resist, and baking is carried out after selective exposure at >=100 deg.C and up to the phase transition temperature. |
