发明名称 |
Method for manufacturing semiconductor device having a metallic silicide layer |
摘要 |
A method for manufacturing a semiconductor device, comprising the steps of forming an oxide film selectively on the surface of a semiconductor substrate; forming a first polycrystalline silicon film on the whole surface and then forming a metallic silicide film on the surface of the first polycrystalline silicon film; patterning the first polycrystalline silicon film and the metallic silicide film except for the desired areas by a lithographic method; depositing polycrystalline silicon on the whole surface to thereby form a second polycrystalline silicon film and allow it to cover the patterned first polycrystalline silicon film and metallic silicide film; and performing oxidation in a state in which a boundary portion between the first polycrystalline silicon film and the metallic silicide film is not exposed to an oxidizing atmosphere by the presence of the second polycrystalline silicon film, to form an oxide film on the surface.
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申请公布号 |
US5238873(A) |
申请公布日期 |
1993.08.24 |
申请号 |
US19910769785 |
申请日期 |
1991.10.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGASHIZONO, MASAYOSHI;KODAIRA, YASUNOBU;SHINO, KATSUYA |
分类号 |
H01L21/3205;H01L21/285;H01L21/336;H01L21/768;H01L21/8234;H01L23/52;H01L27/088;H01L29/78 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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