| 摘要 |
<p>A semiconductor laser provided with barrier layers which are arranged on both cross sections of an active layer formed in the direction vertical to the surface of the device in order to weaken the light waveguide function of the active layer, waveguide layers having band gaps and arranged on both sides of the barrier layers, and clad layers sandwiching the waveguide layers. This structure overcomes the dilemma in designing a device for controlling the waveguide mode encountered in conventional weakly-guided lasers and LOC-structure lasers. Moreover, problems such as of obtaining a higher output, a smaller divergence of the emitted beam, and an improvement of the beam profile are solved.</p> |
