| 摘要 |
A compound semiconductor device is manufactured by coating 1st, 2nd, 3rd, 4th and 5th semiconductor layers in orders, etching 2nd, 3rd, 4th, 5th layers except a part, reetching 1st layer of the partially etched-area, forming 6th, 7th, 8th, 9th semiconductor layers, making T-type emitter electrode (E) on 5th layer, forming ion implanting area (A) of 2nd conductive type to bond emitter E and 2nd layer, forming ion implating area (B) of 1st conductive type to bond 9th and 6th layers, forming a device-seperating area on the 1st etched semiconductor, making base E on (A), forming collector E, source and drain E on (B), making gate E on 8th layer by removing 9th layer between source and drain E.
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