| 摘要 |
PURPOSE:To increase the frequency of response by forming a control region into a collector region and applying forward direction bias between an emitter and a base and reverse bias between the base and a collector so that a depletion layer extending from the base reaches the control region. CONSTITUTION:The P type control regions 4 are shaped to the collector region 3 of N-P-N structur consisting of the N<+> emitter region 1, the P<+> base region 2 and the N<-> collector region 3. Forward direction bias is applied to a junction section j1 between the emitter region 1 and the base region 2, and reverse bias in a manner that the depletion layer 5 reaches the control electrodes 4 is given to a junction section j2 between the base region 2 and the collector region 3. When a signal source is connected between the base region 2 and the control regions 4 under this condition, a small number of carriers having high speed injected to the depletion layer 5 from the emitter region 1 are controlled electrostatically by control signals applied to the control electrodes in the depletion layer 5, and the characteristics of amplification having a large response frequency limit are obtained. |
