| 摘要 |
PURPOSE:To contrive to short the preservation time in a vacuum preservation chamber by a method wherein a post polymerization due to the reaction radical of electron beam (EB) resist is promoted by performing a heating treatment in a vacuum after EB exposure. CONSTITUTION:The mask whereon an EB resist 7 is coated or a substrate 8 of semiconductor, etc. is placed in an exposure chamber 1, and the electron beam from an electron gun 2 is irradiated and exposed on the EB resist according to the desired pattern. Next, the substrate 8 is moved into the resonance cavity 5 in the preservation chamber 4, then the EB resist 7 is heated by the microwave from a magnetron 6. The reaction radical existing in the EB resist 7 is promoted in cross linkaged reaction by this heating, and accordingly the post polymerization is finished in a short time. |
