发明名称 |
Method of producing CVD diamond film substantially free of thermal stress-induced cracks |
摘要 |
In a chemical vapor deposition method for producing a diamond film substantially free of thermal stress-induced cracks, diamond growth occurs on both sides of a thin substrate so that two diamond coatings with identical opposing tensile forces are formed on each side of the substrate at a thickness greater than the thickness of the substrate. |
申请公布号 |
ZA9209233(B) |
申请公布日期 |
1993.08.11 |
申请号 |
ZA19920009233 |
申请日期 |
1992.11.27 |
申请人 |
GENERAL ELECTRIC COMPANY. |
发明人 |
DAVID EARL SLUTZ;FRIEDEL SIEGFRIED KNEMEYER |
分类号 |
B01J19/00;C23C16/01;C23C16/26;C23C16/27;C30B25/02;C30B25/18;C30B29/04;H01L21/205 |
主分类号 |
B01J19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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