发明名称 Method of producing CVD diamond film substantially free of thermal stress-induced cracks
摘要 In a chemical vapor deposition method for producing a diamond film substantially free of thermal stress-induced cracks, diamond growth occurs on both sides of a thin substrate so that two diamond coatings with identical opposing tensile forces are formed on each side of the substrate at a thickness greater than the thickness of the substrate.
申请公布号 ZA9209233(B) 申请公布日期 1993.08.11
申请号 ZA19920009233 申请日期 1992.11.27
申请人 GENERAL ELECTRIC COMPANY. 发明人 DAVID EARL SLUTZ;FRIEDEL SIEGFRIED KNEMEYER
分类号 B01J19/00;C23C16/01;C23C16/26;C23C16/27;C30B25/02;C30B25/18;C30B29/04;H01L21/205 主分类号 B01J19/00
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