发明名称 METHOD FOR PREPARING SINGLE-CRYSTAL ZNSE
摘要 SO2-4876OHC/YU/88 A method for preparing single-crystal ZnSe comprising the steps of: working polycrystalline ZnSe into a rod-shaped starting material; placing the starting material in a reaction vessel; filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H2Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; and converting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T1 in the range of from about room temperature to about 100.degree.C, a temperature increasing zone BC having a temperature gradient of from about 50 to about 200.degree.C/cm, a hot zone CD having a temperature T2 in the range of from about 700 to about 900.degree.C, a temperature decreasing zone DE having a temperature gradient of from about -200 to about -50.degree.C/cm, and a cool zone EF having a temperature T1 in the range of from about room temperature to about 100.degree.C.
申请公布号 CA1321124(C) 申请公布日期 1993.08.10
申请号 CA19880561781 申请日期 1988.03.17
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;PRODUCTION ENGINEERING ASSOCIATION 发明人 TAGUCHI, TSUNEMASA;KIDOGUCHI, ISAO;NANBA, HIROKUNI
分类号 C30B1/08;C30B1/02;C30B13/00;C30B29/48 主分类号 C30B1/08
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