| 摘要 |
<p>To produce a semiconductor film and a thin film semiconductor device by a simple low temperature process and to improve their quality, a channel portion semiconductor film is deposited using an LPCVD apparatus in which the reaction chamber is set either at an effective exhaust rate of at least 10 SCCM/mtorr or at an internal pressure below 10<-><5> torr within 10 minutes from the start of a steady operation of a vacuum exhaust apparatus. The present invention can improve semiconductor characteristics, enhances producibility and lowers the process step. <IMAGE></p> |
