Dry process for removal of undesirable oxide and/or silicon residues from semiconductor wafer after processing

摘要

A process is disclosed for the removal of residual oxide and/or silicon materials from a semiconductor wafer such as silicon-rich oxide residues or polysilicon stringers from the sidewalls of lines or steps formed over semiconductor wafers during the construction of integrated circuit structures without removing the wafer from the vacuum apparatus used in forming the lines on the wafer using a high pressure magnetically enhanced plasma etch using an NF3-containing gas containing at least about 40 volume % NF3 as the etchant gas.