发明名称 SERIAL ACCESSIBLE SEMICONDUCTOR MEMORY DEVICE
摘要 The semiconductor memory device includes a serial memory cell array and an input-output circuit. The input-output circuit includes first and second latch circuits, first and second transfer circuits and an output circuit. The first transfer circuit transfers the information read from the serial memory cell array to the first latch circuit. The second transfer circuit transfers the information from the first latch circuit 103 to the second latch circuit 105. The output circuit externally supplies as output the information held in the second latch circuit. A clock generator supplies a clock signal to the first and the second transfer circuits and the output circuit so that the output operation by the output circuit may be effected, and then the transfer operation by the first transfer circuit may be effected after the transfer by the second transfer circuit has been effected.
申请公布号 US5229965(A) 申请公布日期 1993.07.20
申请号 US19910754897 申请日期 1991.09.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 INOUE, KAZUNARI
分类号 G11C11/401;G11C7/10;G11C11/407;G11C11/409 主分类号 G11C11/401
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