发明名称 Semiconductor device and method for producing the same
摘要 A semiconductor device include: a substrate of a conductivity type; a first well provided in the substrate and of the same conductivity type as the conductivity type of the substrate; a second well provided in the substrate and of an opposite conductivity type to the conductivity type of the substrate; and a buried well provided at a deep position in the substrate and of the opposite conductivity type to the conductivity type of the substrate. A buried well of the same conductivity type as the conductivity type of the substrate is further provided so as to be in contact with at least a part of a bottom portion of the first well so that the first well is at least partially electrically connected to the substrate.
申请公布号 EP0831518(A1) 申请公布日期 1998.03.25
申请号 EP19970115246 申请日期 1997.09.03
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 HIRASE, JUNJI
分类号 H01L21/8238;H01L21/74;H01L21/8242;H01L27/092;H01L27/105;H01L27/108 主分类号 H01L21/8238
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