发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A semiconductor device include: a substrate of a conductivity type; a first well provided in the substrate and of the same conductivity type as the conductivity type of the substrate; a second well provided in the substrate and of an opposite conductivity type to the conductivity type of the substrate; and a buried well provided at a deep position in the substrate and of the opposite conductivity type to the conductivity type of the substrate. A buried well of the same conductivity type as the conductivity type of the substrate is further provided so as to be in contact with at least a part of a bottom portion of the first well so that the first well is at least partially electrically connected to the substrate. |
申请公布号 |
EP0831518(A1) |
申请公布日期 |
1998.03.25 |
申请号 |
EP19970115246 |
申请日期 |
1997.09.03 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
HIRASE, JUNJI |
分类号 |
H01L21/8238;H01L21/74;H01L21/8242;H01L27/092;H01L27/105;H01L27/108 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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