| 摘要 |
The method for forming a contact hole of the MOS device is characterized by (a) forming a field oxide film (2), a gate (3) and a boron phosphorous silicate glass (BPSG) film (4) on the substrate (1), (b) forming a polymer film (5) with a bottom photosensitive agent, and a negative photosensitive film (6) with a top photosensitive agent on the BPSG film (4), (c) forming a contact mask on the film (6) by the photoetching process, (d) selectively depositing an aluminium film (7) on the mask, (e) dry-etching the films (4,5) to form a contact hole, and (f) lifting off the films (5,6,7).
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