| 摘要 |
A method for forming plasma films aiming at overcoming the inconveniences occurring during the use of a CF film as an interlayer isolation film of semiconductor devices such that when the CF film is heated to, for example, about 400-450 DEG C for forming a tungsten wiring, a fluorine-based gas is released from the CF film so as to cause wiring corrosion or film thickness decrease. The method comprises using both a cyclic C6F6 gas and a hydrocarbon gas such as C2H4 gas as the film forming gas, converting these gases into plasma under a pressure of, for example, 0.1 Pa, and forming a CF film on a semiconductor wafer from the active species derived from the plasma at a process temperature of 400 DEG C. Alternatively, the method comprises using a cyclic C6F6 gas as the film forming gas, converting the gas into plasma under a pressure of, for example, 0.06 Pa, and forming a CF film on a semiconductor wafer from the active species derived from the plasma at a process temperature of 400 DEG C.
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