Method for forming interconnect for integrated circuits.

摘要

A thin conductive layer (20) is formed over an underlying structure in an integrated circuit. The underlying structure can be either a semiconductor substrate (20) or an interlevel interconnect signal line (18). An insulating layer (22) is deposited over the device. The insulating layer (22) is patterned and etched in order to expose a portion (24,26) of the underlying conductive layer (20) and to define an interconnect signal line. When the signal line locations are etched away, the thin conductive layer (20) acts as an etch stop and protects the underlying structure. A metal refill process can be used to then form interconnects and contacts within the etched interconnect lines. This results in interconnect and contacts having upper surfaces which are substantially coplanar with the upper surface of the insulating layer (22) in which they are formed. <IMAGE>