| 摘要 |
<p>PURPOSE:To enhance ion implantation/stabilization rate, and thereby enable gas processing operation to be restarted stably even if a sputter metallic layer is peeled off from an ion implantation electrode, resulting in abnormal discharge. CONSTITUTION:A hermetically closed ionization chamber 1 is formed by connecting both the upper and lower ends of an ion implantation electrode 2 to two anodes 3 and 14 while being mutually insulated. The ionization chamber 1 is divided via an ion separation chamber 16 arranged below a sputter electrode 6 located at the lower section of the ionization chamber 1 into an intermediate ionization chamber 1a functioning as a triode to which high amperage current can be sent, and into a lower ionization chamber 1b functioning as a diode to which low amperage current can be sent. And furthermore, it is so designed that radioactive gas passes through the ion separation chamber 16 so as to be led to the ionization chamber 1.</p> |
