发明名称 HALBLEITERANORDNUNG MIT MEHRSCHICHTLEITER.
摘要 A semiconductor device includes a circuit block (11) formed on a semiconductor chip with multilayered wiring layers having two or more layers, and having a specific function assigned thereto, a first current path pattern (12) formed in a first layer of the multilayered wiring layers and running around the circuit block (11), a second current path pattern (13) formed in a second layer of the multilayered wiring layers and running around the circuit block (11), part of the second current path pattern (13) lying over the first current path pattern (12) and the other portion of the second current path pattern (13) lying off the first current path pattern (12) so as to define a connection space with a predetermined width (X) between the first current path pattern (12) and the second current path pattern (13), a first signal path pattern (14A) formed in the first layer of the multilayered wiring layers and serving as a signal path to the circuit block (11), a second signal path pattern (14B) formed in the second layer of the multilayered wiring layers and serving as the signal path to the circuit block (11), and a via contact (15), formed in the connection space, for electrically coupling the first signal path pattern (14A) and the second signal path pattern (14B).
申请公布号 DE3879333(T2) 申请公布日期 1993.06.24
申请号 DE19883879333T 申请日期 1988.08.31
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP;TOSHIBA MICRO-COMPUTER ENGINEERING CORP., KAWASAKI, JP 发明人 ENKAKU, MOTOHIRO C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP;KATO, TOSHIYA, SAIWAI-KU KAWASAKI-SHI, JP
分类号 H01L21/82;H01L21/822;H01L23/528;H01L23/538;H01L27/04;H01L27/118 主分类号 H01L21/82
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