发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enhance a boundary plane between polyimide resin and sealing resin in adhesion even if a boundary plane is generated between them so as to prevent cracks from occurring in a package in a reflowing process by a method wherein the polyimide part of a semiconductor element provided with a lead is subjected to a plasma treatment prior to the sealing of the semiconductor element with resin. CONSTITUTION:A semiconductor element 4 and a lead 1 whose outer surfaces are partially covered with polyimide 3 are electrically connected together, and the semiconductor element 4 provided with the lead 1 is sealed up with sealing resin. In the manufacture of a semiconductor device as mentioned above, at least the polyimide part 3 is subjected to a plasma treatment prior to the resin sealing of the semiconductor element 4 provided with the leads 1. For instance, a die pad formed of polyimide film 3 provided with an adhesive layer 2 is fixed onto the inner leads of the lead frame 1 by bonding, the semiconductor element 4 is placed on the die pad and connected with a gold wire 5, and then all the surface of an unsealed semiconductor device is subjected to a plasma treatment.
申请公布号 JPH05152362(A) 申请公布日期 1993.06.18
申请号 JP19910342281 申请日期 1991.11.30
申请人 NITTO DENKO CORP 发明人 IGARASHI KAZUMASA
分类号 H01L21/312;H01L21/56;H01L21/60;H01L23/50 主分类号 H01L21/312
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