发明名称 |
NONVOLATIVE RANDOM ACCESS MEMORY DEVICE |
摘要 |
2124355 9311540 PCTABS00022 A random access memory (RAM) cell in silicon carbide having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.
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申请公布号 |
CA2124355(A1) |
申请公布日期 |
1993.06.10 |
申请号 |
CA19922124355 |
申请日期 |
1992.11.24 |
申请人 |
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发明人 |
COOPER, JAMES A., JR.;PALMOUR, JOHN W.;CARTER, CALVIN H., JR. |
分类号 |
G11C14/00;G11C11/404;G11C17/00;H01L21/8229;H01L21/8246;H01L27/102;H01L27/105;H01L29/24;(IPC1-7):H01L27/11 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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