METHOD OF MODIFYING CONTACT RESISTANCE IN SEMICONDUCTOR DEVICES AND ARTICLES PRODUCED THEREBY

摘要

A method is disclosed for modifying (reducing) the contact resistance in semiconductor devices having doped silicon junctions (14). The method includes selectively depositing a thin film of tungsten (21) on the exposed surface of a silicon wafer substrate (12) which has a native oxide layer thereon. The tungsten reduces or deteriorates the native oxide layer and makes clean contact to the silicon substrate. Subsequently a titanium nitride barrier layer (22) is deposited over the tungsten layer (21). Semiconductor devices produced according to the method of the invention have contact resistance values less than about 5x10<-7> ohm cm<2>.