Method for improving the step coverage at contact windows.

摘要

On the first metallization layer (14, 16) a silicon dioxide layer (18) is formed on which a second silicon dioxide layer (20) is formed by means of a spin operation. The further silicon dioxide layer (20) is subjected to a plasma oxidation for hardening. On the further silicon dioxide layer (20) a photoresist mask (26) is formed which at predetermined areas leaves free windows (28) at which a contact connection to the lower metallization layer (14, 16) is to be established. In the exposed areas of the photoresist mask (26) the two silicon dioxide layers (18, 20) are removed by means of an etching solution until the lower metallization layer (14, 16) is exposed. The further silicon dioxide layer (20) is then completely removed by sputter etching.