Selective etching process for boron nitride films

摘要

Disclosed is a process for etching a film of boron nitride with high selectivity to a layer of silicon dioxide or silicon nitride. The process involves exposing the film to a plasma formed from a mixture of an oxygen-containing gas, such as oxygen, and a small amount of a fluorine-containing gas, such as CF4. The process provides a high etch rate and anisotropic profiles, as well as good uniformity.