| 摘要 |
The local oxidation of silicon (LOCOS) in the mfr. of VLSI CMOS transistors is mfd. by (a) forming a pad oxide film (2) of at most 200 angstroms, a nitride film (3) of 1800-2500 angstroms, a first stress-preventing film (4), a second stress-preventing film (5) on the silicon substrate (1) in order to form a stack, (b) etching a device-isolating region of the stack to form a window (6), and then implanting a channel-stop ion to form a channel-stop region (8) , and forming a field oxide film (7) on the device- isolating region.
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