发明名称 |
DIRECT CONTROLLABLE CACHE MEMORY |
摘要 |
The cache memory for improving the cache hit rate comprises a state machine unit (1) for generating an answer signal responding to a request signal from a CPU to control the cache memory block, a cache control register (2) for providing a dignostic checking mode and the cache memory block (2) for discriminating the cache hit states to perform an cache access. The state machine unit includes a cache block state controller and a cache access controller. The cache memory further includes a trap generator (4) for checking the hardware error to generate a break point trap and an alignment trap.
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申请公布号 |
KR930004433(B1) |
申请公布日期 |
1993.05.27 |
申请号 |
KR19910009888 |
申请日期 |
1991.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO, UK;KANG, JONG - HUN |
分类号 |
G06F12/08;G06F12/12;(IPC1-7):G06F12/08 |
主分类号 |
G06F12/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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