发明名称 DIRECT CONTROLLABLE CACHE MEMORY
摘要 The cache memory for improving the cache hit rate comprises a state machine unit (1) for generating an answer signal responding to a request signal from a CPU to control the cache memory block, a cache control register (2) for providing a dignostic checking mode and the cache memory block (2) for discriminating the cache hit states to perform an cache access. The state machine unit includes a cache block state controller and a cache access controller. The cache memory further includes a trap generator (4) for checking the hardware error to generate a break point trap and an alignment trap.
申请公布号 KR930004433(B1) 申请公布日期 1993.05.27
申请号 KR19910009888 申请日期 1991.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KO, UK;KANG, JONG - HUN
分类号 G06F12/08;G06F12/12;(IPC1-7):G06F12/08 主分类号 G06F12/08
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