VERFAHREN ZUM HERSTELLEN EINER HALBLEITERANORDNUNG.
摘要
The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen. According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.
申请公布号
DE68906034(D1)
申请公布日期
1993.05.27
申请号
DE1989606034
申请日期
1989.01.24
申请人
N.V. PHILIPS' GLOEILAMPENFABRIEKEN, EINDHOVEN, NL
发明人
SCHMITZ, JOHANNES ELISABETH JOSEF;VAN DIJK, ANTONIUS JOHANNES MARIA;ELLWANGER, RUSSELL CRAIG, NL-5656 AA EINDHOVEN, NL