Method of manufacturing a semiconductor device with aluminium tracks mutually insulated in lateral direction by an aluminium compound.

摘要

A method of manufacturing a semiconductor device whereby on a surface (1) of a semiconductor body (2) a layer comprising aluminium (3) is deposited, in which conductor tracks (4) are etched, between which then an insulating aluminium compound (6) is provided in that a layer of such a material (7) is deposited, which layer is then removed again down to the conductor tracks (4) by a bulk reducing treatment, upon which an insulating layer (11) is deposited into which contact windows (13, 14) are etched down to the layer comprising aluminium (4) for local contacting of the conductor tracks (4). The conductor tracks (4) are provided with a top layer (8) before the deposition of the insulating aluminium compound, and the aluminium compound is removed again down to the top layer (8) after the deposition by means of a polishing treatment which is practically incapable of removing the top layer (8). Mutually insulated conductor tracks (4) can be made in this manner which are suitable for use in integrated circuits with a very high integration density (VLSI).