| 摘要 |
PURPOSE:To provide a high-brightness SH-LED more excellent in durability under high temperature and high moisture by improving a prior art heat treatment of wafers. CONSTITUTION:During growth of an n-layer (window layer) of an SH-LED epitaxial wafer, quenching is conducted momentarily to grow an Al As mixed crystal ratio partially in the n layer. This process enables high-brightness SH- LED epitaxial wafers excellent in durability to be manufactured and light emission brightness to be improved by 50%, thereby contributing to an improvement in economic efficiency. |
