| 摘要 |
PURPOSE:To increase production efficiency by forming an SiC film on the surface of a pyrolytic BN substrate by chemical vapor deposition and then removing the substrate. CONSTITUTION:An Si-contg. compd. such as SiCl4, a C-contg. compd. such as CH4 and H2 are fed at prescribed flow rates to the inner surface of a pyrolytic BN substrate having <=2mum surface roughness such as a crucible and an SiC film is formed on the inner surface of the substrate by chemical vapor deposition at a high temp. of >=1,000 deg.C under reduced pressure in 100-2,000mum thickness. After cooling to ordinary temp., the substrate is easily separated and a high purity SiC body is obtd. |
