发明名称 |
METHOD OF FORMING A DIAMOND FILM |
摘要 |
A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by arc discharge at a carbon cathode while applying a voltage to the substrate to deposite carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes. |
申请公布号 |
EP0280315(B1) |
申请公布日期 |
1993.05.19 |
申请号 |
EP19880102852 |
申请日期 |
1988.02.25 |
申请人 |
NISSIN ELECTRIC COMPANY, LIMITED |
发明人 |
OKAMOTO, KOJI C/O NISSIN ELECTRIC CO., LTD.;TANJO, MASAYASU C/O NISSIN ELECTRIC CO., LTD.;KAMIJO, EIJI C/O NISSIN ELECTRIC CO., LTD. |
分类号 |
C30B29/04;C23C14/06;C30B23/02 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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