| 摘要 |
PURPOSE:To provide a bump electrode forming method, with which a bump electrode having pointed end, can be formed by a simple method, and to provide a semiconductor device employing the above-mentioned protruding electrode. CONSTITUTION:A Ti film 15 and an Au film 16 for a plated electrode are formed on a CCD substrate 10, and a conical seed electrode 17a, which will be ohmic contacted to a region for forming a bump electrode, is formed on the Au film 14. A bump electrode 11, having a pointed part 11, is formed by conducting the above-mentioned steps, also by conducting a process in which a resist film is formed on the surface of the Au film 16 excluding the region for forming the bump electrode, and another process wherein the CCD substrate 10 is electroplated and electrode material is deposited on the seed electrode 17a. |
