| 摘要 |
PURPOSE: To form a trench capacitor with the minimum etching process and a fine alignment by covering a dielectric layer and making connection to a variable potential source that indicates stored data in the capacitor and constituting a second electrode layer for forming the capacitor in the trench along with a first electrode layer and the dielectric layer. CONSTITUTION: A trench 20 that is formed in a substrate is formed so that an impurity surrounds the opening of the trench in a ring by doping a substrate part that becomes a trench region. An insulation layer is provided in the trench, further a first capacitor electrode 38, a dielectric layer 40, and a second capacitor electrode 48 are successively provided on it and at least one protection film is provided on it for contacting a second capacitor electrode 42. A capacitor 12 for memory cell thus produced is formed inside the trench, so that a side wall 34 of the trench is also added as a capacity, thus constituting a further high-density and fine integrated circuit. A field layer in the trench improves the voltage resistance characteristics of the circuit. |
