| 摘要 |
PURPOSE:To produce a phase shift mask having reduced unevenness in the thickness of the pattern of the phase shifter layer, capable of making the best use of phase shift effect and ensuring satisfactory plotting in a superposed state. CONSTITUTION:An etching stopper layer 2 and a light shielding layer 3 are successively formed on a substrate 1 and the layer 3 is patterned. A phase shifter layer 5, an electric conductive layer 6 and a resist are successively formed on the resulting pattern 3, the resist 7 is drawn to form a resist pattern 7 for the phase shifter layer 5 and the layer 5 is etched to produce a phase shift mask. |
