| 摘要 |
<p>An SOI/SOS thin film MOS mesa architecture has its body/channel region (14) extended beyond the source and drain regions (16, 18) and the impurity concentration is increased at a selected portion (e.g. an end portion) of the extended body region (31, 32), so as to provide both a body tie access location which enables the body/channel region (14) to be terminated to a prescribed bias voltage (e.g. Vss), and a channel stop region (41, 42) that is effective to functionally interrupt a current leakage path or 'parasitic' N-channel that may be induced along sidewall surface of the P-type material of the body/channel region (14). In another embodiment, ionizing radiation-induced inversion of the sidewalls (83, 84) of the P-type body/channel region (14) is prevented by an asymmetric sidewall channel stop structure (71, 72) formed in opposite end portions of the source region (16).</p> |
