发明名称 HIGH POWER TRANSISTOR DRIVING CIRCUIT
摘要 The circuit providing the stability, reliability and downsizing by using MOSFET comprises: a section (1) supplying the stabilized power; a rectification circuit (2) for supplying the full-wave rectified alternating current of power supply section (1) to the driving circuit (4); a section (3), which drives the circuit (4) through the transistors (Q3,Q4) receiving the control signal from the control circuit using the optical fiber; a configuration circuit outputting the ON side current and the OFF side current to the base of passive driving high power transistor.
申请公布号 KR930003002(B1) 申请公布日期 1993.04.16
申请号 KR19900011375 申请日期 1990.07.26
申请人 HYUNDAI ELECTRICAL ENGINEERING CO., LTD. 发明人 KIM, NAM - HYE;KIM, DU - SHIK
分类号 H03K3/00;(IPC1-7):H03K3/00 主分类号 H03K3/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利