发明名称 |
HIGH POWER TRANSISTOR DRIVING CIRCUIT |
摘要 |
The circuit providing the stability, reliability and downsizing by using MOSFET comprises: a section (1) supplying the stabilized power; a rectification circuit (2) for supplying the full-wave rectified alternating current of power supply section (1) to the driving circuit (4); a section (3), which drives the circuit (4) through the transistors (Q3,Q4) receiving the control signal from the control circuit using the optical fiber; a configuration circuit outputting the ON side current and the OFF side current to the base of passive driving high power transistor.
|
申请公布号 |
KR930003002(B1) |
申请公布日期 |
1993.04.16 |
申请号 |
KR19900011375 |
申请日期 |
1990.07.26 |
申请人 |
HYUNDAI ELECTRICAL ENGINEERING CO., LTD. |
发明人 |
KIM, NAM - HYE;KIM, DU - SHIK |
分类号 |
H03K3/00;(IPC1-7):H03K3/00 |
主分类号 |
H03K3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|