| 摘要 |
PURPOSE:To form a convex lens layer on a photoresist film to increase the substantial aperture number of an optical system and to improve the resolution of a pattern. CONSTITUTION:Ultraviolet rays 1 transmit a reticle 2 under a hole pattern and thereafter, image and expose a photoresist film 5 on a substrate 6 and a convex lens layer 4 on the film 5 by a projection lens 3. At this time, if the curved surface of the layer 4 is optimized, it is possible to make larger the visual angle of a pupil in the resist than that in the case where there is not the layer 4 and the substantial aperture number of an optical system can be improved by 1.2 times or more. In this embodiment, a photoresist film is previously formed on the substrate 6 in a thickness of 1.4mum using a P-type novolak resist and thereafter, a dot pattern of a diameter of 1.2mum is transferred and exposed by a projection exposing device and is developed to a thickness of 0.4mum from the upper layer of the pattern. In this process, the dot pattern developed by choosing optimally the exposure of the focal point of the projection exposing device is formed into a convex lens form. |
