| 摘要 |
PURPOSE:To make implantation control of high precision by converting the implantation amount determined by a dosage monitor into the implantation amount to a target on the basis of the proportion of the predicted implantation amounts on the target and dosage monitor, and thereupon performing the control of the implantation amount. CONSTITUTION:A first and a second multi-point monitor 8, 15 emit beam current signals from each channel in response to incidence of an ion beam 1. The locus of the ion beam 1 in scanning is determined to make determination of the beam position on a target 13 and the scanning speed. The implantation amount distribution in the scanning direction on the target 13 and dosage monitor 10 is predicted from a specific formula. This is followed by determination of the ratio of the predicted implantation amount on the target 13 to the predicted implantation amount on the dosage monitor 10 determined through integrative calculations of these predicted implantation amount distributions. The implanting amount into the target 13 is controlled on the basis of this ratio and the beam current value measured by the dosage monitor 10 during implantation.
|
