| 摘要 |
<p>This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region (3) and the drain region (4) is of multi-layered structure, in which high impurity concentration portions (31, 33, 35; 41, 43, 45) and low impurity concentration portions (32, 34; 42, 44) are alternately superposed on each other.</p> |
