LIGHT EMITTING DIODE

摘要

PURPOSE:To provide a solid light emitting diode developing less cracks and free of leakage of the current. CONSTITUTION:Formed are a GaAlAs layer 1 of the first conductivity type, an active layer composed of the GaAlAs layer 1 of the first conductivity type thereon, and a GaAlAs layer 3 of the second conductivity type thereon in turn. These three layers with 100mum or more of the total thickness are formed. The slope of the mixed crystal ratio of the GaAlAs layer 1 of the first conductivity type decreases monotonously and is formed at 0.0012/mum or less.