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发明名称
LOW CAPACITANCE AMORPHOUS SILICON FIELD EFFECT TRANSISTOR STRUCTURE
摘要
申请公布号
HK29193(A)
申请公布日期
1993.04.02
申请号
HK19930000291
申请日期
1993.03.25
申请人
GENERAL ELECTRIC COMPANY
发明人
POSSIN, GEORGE EDWARD
分类号
H01L29/78;G02F1/136;G02F1/1368;G09F9/35;H01L21/336;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):H01L29/78;H01L29/06
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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